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| IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability C G E Symbol V CES V CGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) tsc PC TJ TJM T STG Md Weight Max. Lead Temperature for Soldering (1.6mm from case for 10s) Mounting torque . Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C T C = 90C T C = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 82 Clamped inductive load, L = 100 H TJ = 125C, VCE = 720 V; VGE = 15V, RG = 82 T C = 25C Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 ... +150 150 -55 ... +150 V V V V A A A A IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V TO-247AD C G E s W C C C Features * High frequency IGBT with guaranteed Short Circuit SOA capability. * IGBT with anti-parallel diode in one package * 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * DC choppers Advantages * Saves space (two devices in one package) * Easy to mount (isolated mounting hole) * Reduces assembly time and cost * Operates cooler * Easier to assemble 1.15/10 Nm/lb-in. 6 300 g C Symbol Test Conditions (TJ = 25C unless otherwise specified) BV CES V GE(th) I CES I GES V CE(sat) IC IC = 4.0 mA, V GE = 0 V = 1.5 mA, VCE = V GE TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 1200 4 8 V V VCE = 0.8 VCES , VGE= 0 V Note 2 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V 500 A 8 mA + 100 nA 4.0 V 94522B(6/95) (c) 1994 IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH POB 1180; D-68619; Lampertheim, Germany Tel: +49-6206-5030; Fax: +49-6206-503627 IXSH15N120AU1 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi tc Eoff td(on) tri E(on) td(off) tfi tc Eoff RthJC RthCK 0.25 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100H RG = 82 VCLAMP = 0.8 VCES Note 1 900 1200 14.5 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100H RG = 82 , VCLAMP = 0.8 VCES Note 1 IC = Ic90, VGE = 15 V, VCE = 0.5 VCES IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % VGE = 15V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz Characteristic Values Min Typ. Max. 6 7 65 1800 160 45 75 20 35 100 200 450 600 750 5.4 100 200 TBD S A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ 0.83 K/W K/W TO-247AD (IXSH) Reverse Diode (FRED) Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. TJ = 125C TJ = 25C 40 16 300 2.3 2.1 60 18 V ns A ns 1.0 K/W VF trr IRM trr RthJC IF = IC90, VGE = 0V Pulse test, t< 300 s, duty cycle < 2% IF IF TJ = 1A; di/dt = -100A/s; VR = 30V; = IC90, VGE = 0V, -diF /dt = 240 A/s = 100C, VR = 540V Notes: 1) Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or RG values. 2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH POB 1180; D-68619; Lampertheim, Germany Tel: +49-6206-5030; Fax: +49-6206-503627 |
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